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Indium phosphide solar cells: status and prospects for use in spaceThe current status of indium phosphide cell research is reviewed and state of the art efficiencies compared to those of GaAs and Si. It is shown that the radiation resistance of InP cells is superior to that of either GaAs or Si under 1 MeV electron and 10 MeV proton irradiation. Using lightweight blanket technology, a SEP array structure and projected cell efficiencies, array specific powers are obtained for all three cell types. Array performance is calculated as a function of time in orbit. The results indicate that arrays using InP cells can outperform those using GaAs or Si in orbits where radiation is a significant cell degradation factor. It is concluded that InP solar cells are excellent prospects for future use in the space radiation environment.
Document ID
19860017048
Document Type
Conference Paper
Authors
Weinberg, I.
(NASA Lewis Research Center Cleveland, OH, United States)
Brinker, D. J.
(NASA Lewis Research Center Cleveland, OH, United States)
Date Acquired
September 5, 2013
Publication Date
January 1, 1986
Subject Category
Electronics And Electrical Engineering
Report/Patent Number
NAS 1.15:87315
E-3046
NASA-TM-87315
Meeting Information
Intersociety Energy Conversion Engineering Conference (IECEC)(San Diego, CA)
Funding Number(s)
PROJECT: RTOP 506-41-11
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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