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Development of silicon carbide semiconductor devices for high temperature applicationsThe semiconducting properties of electronic grade silicon carbide crystals, such as wide energy bandgap, make it particularly attractive for high temperature applications. Applications for high temperature electronic devices include instrumentation for engines under development, engine control and condition monitoring systems, and power conditioning and control systems for space platforms and satellites. Discrete prototype SiC devices were fabricated and tested at elevated temperatures. Grown p-n junction diodes demonstrated very good rectification characteristics at 870 K. A depletion-mode metal-oxide-semiconductor field-effect transistor was also successfully fabricated and tested at 770 K. While optimization of SiC fabrication processes remain, it is believed that SiC is an enabling high temperature electronic technology.
Document ID
Document Type
Conference Paper
Matus, Lawrence G.
(Sverdrup Technology, Inc., Brook Park OH., United States)
Powell, J. Anthony
(NASA Lewis Research Center Cleveland, OH, United States)
Petit, Jeremy B.
(Sverdrup Technology, Inc., Brook Park OH., United States)
Date Acquired
September 6, 2013
Publication Date
January 1, 1991
Subject Category
Solid-State Physics
Report/Patent Number
NAS 1.15:104398
Meeting Information
International High Temperature Electronics Conference(Albuquerque, NM)
Accession Number
Funding Number(s)
PROJECT: RTOP 505-62-50
Distribution Limits
Work of the US Gov. Public Use Permitted.
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