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Circular electrode geometry metal-semiconductor-metal photodetectorsThe invention comprises a high speed, metal-semiconductor-metal photodetector which comprises a pair of generally circular, electrically conductive electrodes formed on an optically active semiconductor layer. Various embodiments of the invention include a spiral, intercoiled electrode geometry and an electrode geometry comprised of substantially circular, concentric electrodes which are interposed. These electrode geometries result in photodetectors with lower capacitances, dark currents and lower inductance which reduces the ringing seen in the optical pulse response.
Document ID
19950017628
Acquisition Source
Legacy CDMS
Document Type
Other - Patent Application
Authors
Mcaddo, James A.
(NASA Langley Research Center Hampton, VA, United States)
Towe, Elias
(Virginia Univ. Charlottesville, VA., United States)
Bishop, William L.
(Bishop, William L., Charlottesville VA., United States)
Wang, Liang-Guo
(Wang, Liang-Guo, Hampton VA., United States)
Date Acquired
September 6, 2013
Publication Date
January 5, 1994
Subject Category
Electronics And Electrical Engineering
Report/Patent Number
NAS 1.71:LAR-15172-1-CU
Accession Number
95N24048
Funding Number(s)
CONTRACT_GRANT: NAG1-1434
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
Patent
NASA-CASE-LAR-15172-1-CU
Patent Application
US-PATENT-APPL-SN-179598
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