NTRS - NASA Technical Reports Server

As of October 27, 2023, NASA STI Services will no longer have an embargo for accepted manuscripts. For more information visit NTRS News.

Back to Results
Site-Competition Epitaxy for N-Type and P-Type Dopant Control in CVD Sic EpilayersThe use of site-competition epitaxy, which is based on intentional variation of the Si/C ratio during epitaxy, has now been reproduced in numerous national and international laboratories. However, previous reports have only considered dopant incorporation control for epitaxy on the Si-face 6H-SiC(OOO1) substrates. Presented in this paper is the extension of this technique for control of phosphorous incorporation and also a comparison of controlled doping on C-face 6H-SiC(OOO1) versus Si-face 6H-SiC(OOO1) substrates for aluminum, boron, nitrogen, and phosphorous.
Document ID
Document Type
Reprint (Version printed in journal)
Larkin, D. J.
(NASA Lewis Research Center Cleveland, OH United States)
Date Acquired
September 6, 2013
Publication Date
January 1, 1995
Publication Information
Publication: Inst. Phys. Conf. Ser: Chapter 1
Issue: 142
Subject Category
Solid-State Physics
Report/Patent Number
NAS 1.15:112474
Meeting Information
Meeting: Silicon Carbide and Related Materials
Location: Kyoto
Country: Japan
Start Date: January 1, 1995
Accession Number
Distribution Limits
Work of the US Gov. Public Use Permitted.
No Preview Available