NASA Logo

NTRS

NTRS - NASA Technical Reports Server

Press Enter or click the Search button to begin your search.

Back to Results
Evaluation of Optimum HgZnTe Crystal Growth Parameters and USML-2 Flight SupportWork associated with contract provided support for the approved flight experiment 'Crystal Growth of Selected 2-6 Semiconducting Alloys by Directional Solidification.' General activities included ground-based melt studies, compositional and microstructure characterization of the grown crystals, and participation in the continuing assessment of the program. Specifically, work was performed to determine the optimum furnace translation rate at which a HgZnTe sample could be removed from the crystal growth furnace to avoid shrinkage cavities. Additionally, nine HgZnTe ampoules were prepared and delivered to Marshall Space Flight Center for Ground Control Experiment Laboratory Testing.
Document ID
19970032364
Acquisition Source
Marshall Space Flight Center
Document Type
Contractor Report (CR)
Authors
Scripa, Rosalia N.
(Alabama Univ. Huntsville, AL United States)
Date Acquired
September 6, 2013
Publication Date
May 30, 1997
Subject Category
Solid-State Physics
Report/Patent Number
NAS 1.26:204629
NASA-CR204629
Report Number: NAS 1.26:204629
Report Number: NASA-CR204629
Accession Number
97N29378
Funding Number(s)
CONTRACT_GRANT: NAS8-40429
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
No Preview Available