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600 C Logic Gates Using Silicon Carbide JFET'sComplex electronics and sensors are increasingly being relied on to enhance the capabilities and efficiency of modernjet aircraft. Some of these electronics and sensors monitor and control vital engine components and aerosurfaces that operate at high temperatures above 300 C. However, since today's silicon-based electronics technology cannot function at such high temperatures, these electronics must reside in environmentally controlled areas. This necessitates either the use of long wire runs between sheltered electronics and hot-area sensors and controls, or the fuel cooling of electronics and sensors located in high-temperature areas. Both of these low-temperature-electronics approaches suffer from serious drawbacks in terms of increased weight, decreased fuel efficiency, and reduction of aircraft reliability. A family of high-temperature electronics and sensors that could function in hot areas would enable substantial aircraft performance gains. Especially since, in the future, some turbine-engine electronics may need to function at temperatures as high as 600 C. This paper reports the fabrication and demonstration of the first semiconductor digital logic gates ever to function at 600 C. Key obstacles blocking the realization of useful 600 C turbine engine integrated sensor and control electronics are outlined.
Document ID
Document Type
Preprint (Draft being sent to journal)
Neudeck, Philip G. (NASA Glenn Research Center Cleveland, OH United States)
Beheim, Glenn M. (NASA Glenn Research Center Cleveland, OH United States)
Salupo, Carl S.a (Cortez 3 Service Corp. Cleveland, OH United States)
Date Acquired
September 7, 2013
Publication Date
March 1, 2000
Subject Category
Electronics and Electrical Engineering
Report/Patent Number
NAS 1.15:209928
Meeting Information
Government Microcircuit Applications(Anaheim, CA)
Funding Number(s)
PROJECT: RTOP 519-20-53
Distribution Limits
Work of the US Gov. Public Use Permitted.

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