Fracture Strength of Single-Crystal Silicon Carbide Microspecimens at Room and Elevated Temperature

Three shapes of tensile specimens were tested--curved with a very low stress concentration factor and straight with either a circular hole or an elliptical hole. The nominal thickness was 125 micron with a net section 100 micron wide; the overall length of these microspecimens was 3.1 mm. They were fabricated by an improved version of deep reactive ion etching, which produced specimens with smooth sidewalls and cross-sections having a slightly trapezoidal shape that was exaggerated inside the holes. The novel test setup used a vertical load train extending into a resistance furnace. The specimens had wedge-shaped ends which fit into ceramic grips. The fixed grip was mounted on a ceramic post, and the movable grip was connected to a load cell and actuator outside the furnace with a ceramic-encased nichrome wire. The same arrangement was used for tests at 24 and at 1000 C. The strengths of the curved specimens for two batches of material (made with slightly different processes) were 0.66+/-0.12 GPa and 0.45+/-0.20 GPa respectively at 24 C with identical values at 1000 C. The fracture strengths of the circular-hole and elliptical-hole specimens (computed from the stress concentration factors and measured loads at failure) were approximately 1.2 GPa with slight decreases at the higher temperature. Fractographic examinations showed failures initiating on the surface--primarily at corners. Weibull predictions of fracture strengths for the hole specimens based on the properties of the curved specimens were reasonably effective for the circular holes, but not for the elliptical holes.