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Power MOSFET Thermal Instability Operation Characterization SupportMetal-oxide semiconductor field-effect transistors (MOSFETs) are used extensively in flight hardware and ground support equipment. In the quest for faster switching times and lower "on resistance," the MOSFETs designed from 1998 to the present have achieved most of their intended goals. In the quest for lower on resistance and higher switching speeds, the designs now being produced allow the charge-carrier dominated region (once small and outside of the area of concern) to become important and inside the safe operating area (SOA). The charge-carrier dominated region allows more current to flow as the temperature increases. The higher temperatures produce more current resulting in the beginning of thermal runaway. Thermal runaway is a problem affecting a wide range of modern MOSFETs from more than one manufacturer. This report contains information on MOSFET failures, their causes and test results and information dissemination.
Document ID
20100014777
Document Type
Technical Memorandum (TM)
Authors
Shue, John L. (NASA Goddard Space Flight Center Greenbelt, MD, United States)
Leidecker, Henning (NASA Goddard Space Flight Center Greenbelt, MD, United States)
Date Acquired
August 24, 2013
Publication Date
April 1, 2010
Subject Category
Spacecraft Instrumentation and Astrionics
Report/Patent Number
L-19856
NF1676L-10501
NASA/TM-2010-216684
Funding Number(s)
WBS: WBS 869021.03.07.01.19
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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