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Recent Developments in Ultra High Temperature Ceramics at NASA AmesNASA Ames is pursuing a variety of approaches to modify and control the microstructure of UHTCs with the goal of improving fracture toughness, oxidation resistance and controlling thermal conductivity. The overall goal is to produce materials that can perform reliably as sharp leading edges or nose tips in hypersonic reentry vehicles. Processing approaches include the use of preceramic polymers as the SiC source (as opposed to powder techniques), the addition of third phases to control grain growth and oxidation, and the use of processing techniques to produce high purity materials. Both hot pressing and field assisted sintering have been used to make UHTCs. Characterization of the mechanical and thermal properties of these materials is ongoing, as is arcjet testing to evaluate performance under simulated reentry conditions. The preceramic polymer approach has generated a microstructure in which elongated SiC grains grow in the form of an in-situ composite. This microstructure has the advantage of improving fracture toughness while potentially improving oxidation resistance by reducing the amount and interconnectivity of SiC in the material. Addition of third phases, such as Ir, results in a very fine-grained microstructure, even in hot-pressed samples. The results of processing and compositional changes on microstructure and properties are reported, along with selected arcjet results.
Document ID
20100023450
Acquisition Source
Ames Research Center
Document Type
Conference Paper
Authors
Johnson, Sylvia M.
(NASA Ames Research Center Moffett Field, CA, United States)
Gasch, Matt
(NASA Ames Research Center Moffett Field, CA, United States)
Lawson, John W.
(NASA Ames Research Center Moffett Field, CA, United States)
Gusman, Michael I.
(Eloret Corp. Sunnyvale, CA, United States)
Stackpole, Margaret M.
(Eloret Corp. Sunnyvale, CA, United States)
Date Acquired
August 24, 2013
Publication Date
October 19, 2009
Subject Category
Nonmetallic Materials
Report/Patent Number
ARC-E-DAA-TN892
Funding Number(s)
CONTRACT_GRANT: NNA04BC25C
Distribution Limits
Public
Copyright
Public Use Permitted.
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