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Towards Accelerated Aging Methodologies and Health Management of Power MOSFETs (Technical Brief)Understanding aging mechanisms of electronic components is of extreme importance in the aerospace domain where they are part of numerous critical subsystems including avionics. In particular, power MOSFETs are of special interest as they are involved in high voltage switching circuits such as drivers for electrical motors. With increased use of electronics in aircraft control, it becomes more important to understand the degradation of these components in aircraft specific environments. In this paper, we present an accelerated aging methodology for power MOSFETs that subject the devices to indirect thermal overstress during high voltage switching. During this accelerated aging process, two major modes of failure were observed - latch-up and die attach degradation. In this paper we present the details of our aging methodology along with details of experiments and analysis of the results.
Document ID
20100037964
Acquisition Source
Ames Research Center
Document Type
Conference Paper
Authors
Celaya, Jose R.
(SGT, Inc. Moffett Field, CA, United States)
Patil, Nishad
(Mission Critical Technologies, Inc. Moffett Field, CA, United States)
Saha, Sankalita
(Mission Critical Technologies, Inc. Moffett Field, CA, United States)
Wysocki, Phil
(ASRC Aerospace Corp. United States)
Goebel, Kai
(NASA Ames Research Center Moffett Field, CA, United States)
Date Acquired
August 25, 2013
Publication Date
September 27, 2009
Subject Category
Electronics And Electrical Engineering
Report/Patent Number
ARC-E-DAA-TN724
Meeting Information
Meeting: Annual Conference of the Prognostics and Health Management Society 2009
Location: San Diego, CA
Country: United States
Start Date: September 27, 2009
End Date: October 1, 2009
Sponsors: Prognostics and Health Management Society
Funding Number(s)
WBS: WBS 645846.02.07.01.01
Distribution Limits
Public
Copyright
Public Use Permitted.
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