High Temperature Capacitive Pressure Sensor Employing a SiC Based Ring OscillatorIn an effort to develop harsh environment electronic and sensor technologies for aircraft engine safety and monitoring, we have used capacitive-based pressure sensors to shift the frequency of a SiC-electronics-based oscillator to produce a pressure-indicating signal that can be readily transmitted, e.g. wirelessly, to a receiver located in a more benign environment. Our efforts target 500 C, a temperature well above normal operating conditions of commercial circuits but within areas of interest in aerospace engines, deep mining applications and for future missions to the Venus atmosphere. This paper reports for the first time a ring oscillator circuit integrated with a capacitive pressure sensor, both operating at 500 C. This demonstration represents a significant step towards a wireless pressure sensor that can operate at 500 C and confirms the viability of 500 C electronic sensor systems.
Document ID
20120000848
Acquisition Source
Glenn Research Center
Document Type
Conference Paper
Authors
Meredith, Roger D. (NASA Glenn Research Center Cleveland, OH, United States)
Neudeck, Philip G. (NASA Glenn Research Center Cleveland, OH, United States)
Ponchak, George E. (NASA Glenn Research Center Cleveland, OH, United States)
Beheim, Glenn M. (NASA Glenn Research Center Cleveland, OH, United States)
Scardelletti, Maximilian (NASA Glenn Research Center Cleveland, OH, United States)
Jordan, Jennifer L. (NASA Glenn Research Center Cleveland, OH, United States)
Chen, Liang-Yu (Ohio Aerospace Inst. Cleveland, OH, United States)
Spry, David J. (NASA Glenn Research Center Cleveland, OH, United States)
Krawowski, Michael J. (NASA Glenn Research Center Cleveland, OH, United States)
Hunter, Gary W. (NASA Glenn Research Center Cleveland, OH, United States)
Date Acquired
August 25, 2013
Publication Date
September 11, 2011
Subject Category
Electronics And Electrical Engineering
Report/Patent Number
E-18072
Meeting Information
Meeting: 2011 International Conference on Silicon Carbide and Related Materials (ICSCRM 2011)