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Lateral Growth Expansion of 4H/6H-SiC m-plane Pseudo Fiber Crystals by Hot Wall CVD EpitaxyLateral expansion of small mixed polytype 4H/6H-SiC slivers were realized by hot wall chemical vapor deposition (HWCVD). Small slivers cut from m-oriented ..11..00.. SiC boule slices containing regions of 4H and 6H SiC were exposed to HWCVD conditions using standard silane/propane chemistry for a period of up to eight hours. The slivers exhibited approximately 1500 microns (1.5 mm) of total lateral expansion. Initial analysis by synchrotron white beam x-ray topography (SWBXT) confirms, that the lateral growth was homoepitaxial, matching the polytype of the respective underlying region of the seed sliver.
Document ID
Acquisition Source
Glenn Research Center
Document Type
Conference Paper
Trunek, Andrew J.
(Ohio Aerospace Inst. Cleveland, OH, United States)
Neudeck, Philip G.
(NASA Glenn Research Center Cleveland, OH, United States)
Woodworth, Andrew A.
(NASA Glenn Research Center Cleveland, OH, United States)
Powell, J. A.
(Sest, Inc. Cleveland, OH, United States)
Spry, David J.
(NASA Glenn Research Center Cleveland, OH, United States)
Raghothamachar, Balaji
(Stony Brook Univ. Stony Brook, NY, United States)
Dudley, Michael
(Stony Brook Univ. Stony Brook, NY, United States)
Date Acquired
August 25, 2013
Publication Date
September 11, 2011
Subject Category
Chemistry And Materials (General)
Report/Patent Number
Meeting Information
Meeting: International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM2011)
Location: Cleveland, OH
Country: United States
Start Date: September 11, 2011
End Date: September 16, 2011
Funding Number(s)
WBS: WBS 031102.02.03.0781.11
Distribution Limits
Public Use Permitted.
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