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Temperature Induced Voltage Offset Drifts in Silicon Carbide Pressure SensorsWe report the reduction of transient drifts in the zero pressure offset voltage in silicon carbide (SiC) pressure sensors when operating at 600 C. The previously observed maximum drift of +/- 10 mV of the reference offset voltage at 600 C was reduced to within +/- 5 mV. The offset voltage drifts and bridge resistance changes over time at test temperature are explained in terms of the microstructure and phase changes occurring within the contact metallization, as analyzed by Auger electron spectroscopy and field emission scanning electron microscopy. The results have helped to identify the upper temperature reliable operational limit of this particular metallization scheme to be 605 C.
Document ID
Acquisition Source
Glenn Research Center
Document Type
Conference Paper
Okojie, Robert S.
(NASA Glenn Research Center Cleveland, OH, United States)
Lukco, Dorothy
(ASRC Research Corp. Cleveland, OH, United States)
Nguyen, Vu
(Sienna Technologies, Inc. Woodinville, WA, United States)
Savrun, Ender
(Sienna Technologies, Inc. Woodinville, WA, United States)
Date Acquired
August 27, 2013
Publication Date
May 8, 2012
Subject Category
Electronics And Electrical Engineering
Report/Patent Number
Meeting Information
Meeting: IMAPS High Temperature Electronics Conference (HiTEC)
Location: Albuquerque, NM
Country: United States
Start Date: May 8, 2012
End Date: May 10, 2012
Sponsors: International Microelectronics and Packaging Society
Funding Number(s)
WBS: WBS 984754.
Distribution Limits
Public Use Permitted.
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