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Assessment of Durable SiC JFET Technology for +600 C to -125 C Integrated Circuit OperationElectrical characteristics and circuit design considerations for prototype 6H-SiC JFET integrated circuits (ICs) operating over the broad temperature range of -125 C to +600 C are described. Strategic implementation of circuits with transistors and resistors in the same 6H-SiC n-channel layer enabled ICs with nearly temperature-independent functionality to be achieved. The frequency performance of the circuits declined at temperatures increasingly below or above room temperature, roughly corresponding to the change in 6H-SiC n-channel resistance arising from incomplete carrier ionization at low temperature and decreased electron mobility at high temperature. In addition to very broad temperature functionality, these simple digital and analog demonstration integrated circuits successfully operated with little change in functional characteristics over the course of thousands of hours at 500 C before experiencing interconnect-related failures. With appropriate further development, these initial results establish a new technology foundation for realizing durable 500 C ICs for combustion engine sensing and control, deep-well drilling, and other harsh-environment applications.
Document ID
Document Type
Conference Paper
Neudeck, P. G.
(NASA Glenn Research Center Cleveland, OH, United States)
Krasowski, M. J.
(NASA Glenn Research Center Cleveland, OH, United States)
Prokop, N. F.
(NASA Glenn Research Center Cleveland, OH, United States)
Date Acquired
August 27, 2013
Publication Date
October 9, 2011
Subject Category
Electronics And Electrical Engineering
Report/Patent Number
Meeting Information
Meeting: 220th Electrochemical Society Meeting, Symposium on GaN and SiC Power Technologies
Location: Boston, MA
Country: United States
Start Date: October 9, 2011
End Date: October 14, 2011
Funding Number(s)
WBS: WBS 561581.
Distribution Limits
Work of the US Gov. Public Use Permitted.
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