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Absorption Voltages and Insulation Resistance in Ceramic Capacitors with CracksTime dependence of absorption voltages (V(sub abs)) in different types of low-voltage X5R and X7R ceramic capacitors was monitored for a maximum duration of hundred hours after polarization. To evaluate the effect of mechanical defects on V(sub abs)), cracks in the dielectric were introduced either mechanically or by thermal shock. The maximum absorption voltage, time to roll-off, and the rate of voltage decrease are shown to depend on the crack-related leakage currents and insulation resistance in the parts. A simple model that is based on the Dow equivalent circuit for capacitors with absorption has been developed to assess the insulation resistance of capacitors. Standard measurements of the insulation resistance, contrary to the measurements based on V(sub abs)), are not sensitive to the presence of mechanical defects and fail to reveal capacitors with cracks.
Document ID
20140008867
Acquisition Source
Goddard Space Flight Center
Document Type
Preprint (Draft being sent to journal)
Authors
Teverovsky, Alexander
(ASRC Aerospace Corp., Space and Defense Greenbelt, MD)
Date Acquired
July 9, 2014
Publication Date
January 1, 2014
Publication Information
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Subject Category
Electronics And Electrical Engineering
Report/Patent Number
GSFC-E-DAA-TN14125
Funding Number(s)
CONTRACT_GRANT: NNG13CR48C
Distribution Limits
Public
Copyright
Public Use Permitted.
Keywords
ceramic capacitor
cracking
dielectric absorption
insulation resistance
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