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High Temperature Dynamic Pressure Measurements Using Silicon Carbide Pressure SensorsUn-cooled, MEMS-based silicon carbide (SiC) static pressure sensors were used for the first time to measure pressure perturbations at temperatures as high as 600 C during laboratory characterization, and subsequently evaluated in a combustor rig operated under various engine conditions to extract the frequencies that are associated with thermoacoustic instabilities. One SiC sensor was placed directly in the flow stream of the combustor rig while a benchmark commercial water-cooled piezoceramic dynamic pressure transducer was co-located axially but kept some distance away from the hot flow stream. In the combustor rig test, the SiC sensor detected thermoacoustic instabilities across a range of engine operating conditions, amplitude magnitude as low as 0.5 psi at 585 C, in good agreement with the benchmark piezoceramic sensor. The SiC sensor experienced low signal to noise ratio at higher temperature, primarily due to the fact that it was a static sensor with low sensitivity.
Document ID
Document Type
Conference Paper
Okojie, Robert S.
(NASA Glenn Research Center Cleveland, OH United States)
Meredith, Roger D.
(NASA Glenn Research Center Cleveland, OH United States)
Chang, Clarence T.
(NASA Glenn Research Center Cleveland, OH United States)
Savrun, Ender
(Sienna Technologies, Inc. Woodinville, WA, United States)
Date Acquired
December 23, 2014
Publication Date
May 13, 2014
Subject Category
Instrumentation And Photography
Spacecraft Propulsion And Power
Report/Patent Number
Meeting Information
Meeting: International Conference on High Temperature Electronics (HiTEC 2014)
Location: Albuquerque, NM
Country: United States
Start Date: May 13, 2014
End Date: May 15, 2014
Sponsors: International Microelectronics and Packaging Society
Funding Number(s)
WBS: WBS 794072.
Distribution Limits
Public Use Permitted.
Pressure Sensors
Silicon Carbide
Ohmic Contacts
High Temperature
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