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Demonstration of SiC Pressure Sensors at 750 CWe report the first demonstration of MEMS-based 4H-SiC piezoresistive pressure sensors tested at 750 C and in the process confirmed the existence of strain sensitivity recovery with increasing temperature above 400 C, eventually achieving near or up to 100% of the room temperature values at 750 C. This strain sensitivity recovery phenomenon in 4H-SiC is uncharacteristic of the well-known monotonic decrease in strain sensitivity with increasing temperature in silicon piezoresistors. For the three sensors tested, the room temperature full-scale output (FSO) at 200 psig ranged between 29 and 36 mV. Although the FSO at 400 C dropped by about 60%, full recovery was achieved at 750 C. This result will allow the operation of SiC pressure sensors at higher temperatures, thereby permitting deeper insertion into the engine combustion chamber to improve the accurate quantification of combustor dynamics.
Document ID
Document Type
Conference Paper
Okojie, Robert S.
(NASA Glenn Research Center Cleveland, OH United States)
Lukco, Dorothy
(Vantage Partners, LLC Brook Park, OH, United States)
Nguyen, Vu
(Sienna Technologies, Inc. Woodinville, WA, United States)
Savrun, Ender
(Sienna Technologies, Inc. Woodinville, WA, United States)
Date Acquired
January 29, 2015
Publication Date
May 13, 2014
Subject Category
Electronics And Electrical Engineering
Metals And Metallic Materials
Report/Patent Number
Meeting Information
Meeting: International Conference on High Temperature Electronics (HiTEC 2014)
Location: Albuquerque, NM
Country: United States
Start Date: May 13, 2014
End Date: May 15, 2014
Sponsors: International Microelectronics and Packaging Society
Funding Number(s)
WBS: WBS 794072.
Distribution Limits
Public Use Permitted.
Pressure Sensors
Ohmic Contacts
Silicon Carbide
High Temperature
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