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CFD Growth of 3C-SiC on 4H/6H MesasThis article describes growth and characterization of the highest quality reproducible 3C-SiC heteroepitaxial films ever reported. By properly nucleating 3C-SiC growth on top of perfectly on-axis (0001) 4H-SiC mesa surfaces completely free of atomic scale steps and extended defects, growth of 3C-SiC mesa heterofilms completely free of extended crystal defects can be achieved. In contrast, nucleation and growth of 3C-SiC mesa heterofilms on top of 4H-SiC mesas with atomic-scale steps always results in numerous observable dislocations threading through the 3C-SiC epilayer. High-resolution X-ray diffraction and transmission electron microscopy measurements indicate non-trivial in-plane lattice mismatch between the 3C and 4H layers. This mismatch is somewhat relieved in the step-free mesa case via misfit dislocations confined to the 3C/4H interfacial region without dislocations threading into the overlying 3C-SiC layer. These results indicate that the presence or absence of steps at the 3C/4H heteroepitaxial interface critically impacts the quality, defect structure, and relaxation mechanisms of single-crystal heteroepitaxial 3C-SiC films.
Document ID
Document Type
Preprint (Draft being sent to journal)
External Source(s)
Neudeck, Philip G.
(NASA Glenn Research Center Cleveland, OH, United States)
Trunek, Andrew J.
(Ohio Aerospace Inst. Brook Park, OH, United States)
Spry, David J.
(Ohio Aerospace Inst. Brook Park, OH, United States)
Powell, J. Anthony
(Sest, Inc. Cleveland, OH, United States)
Du, Hui
(Carnegie-Mellon Univ. Pittsburgh, PA, United States)
Skowronski, Marek
(Carnegie-Mellon Univ. Pittsburgh, PA, United States)
Huang, XianRong
(State Univ. of New York Stony Brook, NY, United States)
Dudley, Michael
(State Univ. of New York Stony Brook, NY, United States)
Date Acquired
December 3, 2015
Publication Date
September 1, 2006
Subject Category
Plasma Physics
Electronics And Electrical Engineering
Composite Materials
Report/Patent Number
Funding Number(s)
WBS: WBS 953033.01. 03.02
Distribution Limits
Public Use Permitted.
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