Experimental and Theoretical Study of 4H-SiC JFET Threshold Voltage Body Bias Effect from 25 C to 500 CThis work reports a theoretical and experimental study of 4H-SiC JFET threshold voltage as a function of substrate body bias, device position on the wafer, and temperature from 25 C (298K) to 500 C (773K). Based on these results, an alternative approach to SPICE circuit simulation of body effect for SiC JFETs is proposed.
Neudeck, Philip G. (NASA Glenn Research Center Cleveland, OH United States)
Spry, David J. (NASA Glenn Research Center Cleveland, OH United States)
Chen, Liangyu (Ohio Aerospace Inst. Cleveland, OH, United States)
April 25, 2016
October 4, 2015
Electronics And Electrical Engineering
Meeting: International Conference on Silicon Carbid and Related Materials