Experimental and Theoretical Study of 4H-SiC JFET Threshold Voltage Body Bias Effect from 25 C to 500 CThis work reports a theoretical and experimental study of 4H-SiC JFET threshold voltage as a function of substrate body bias, device position on the wafer, and temperature from 25 C (298K) to 500 C (773K). Based on these results, an alternative approach to SPICE circuit simulation of body effect for SiC JFETs is proposed.
Document ID
20160005307
Acquisition Source
Glenn Research Center
Document Type
Conference Paper
Authors
Neudeck, Philip G. (NASA Glenn Research Center Cleveland, OH United States)
Spry, David J. (NASA Glenn Research Center Cleveland, OH United States)
Chen, Liangyu (Ohio Aerospace Inst. Cleveland, OH, United States)
Date Acquired
April 25, 2016
Publication Date
October 4, 2015
Subject Category
Electronics And Electrical Engineering
Report/Patent Number
GRC-E-DAA-TN26182Report Number: GRC-E-DAA-TN26182
Meeting Information
Meeting: International Conference on Silicon Carbid and Related Materials