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A High Frequency (HF) Inductive Power Transfer Circuit for High Temperature Applications Using SiC Schottky DiodesWireless sensors placed in high temperature environments, such as aircraft engines, are desirable to reduce the mass and complexity of routing wires. While communication with the sensors is straight forward, providing power wirelessly is still a challenge. This paper introduces an inductive wireless power transfer circuit incorporating SiC Schottky diodes and its operation from room temperature (25 C) to 500 C.
Document ID
20180000592
Document Type
Conference Paper
Authors
Jordan, Jennifer L. (NASA Glenn Research Center Cleveland, OH, United States)
Ponchak, George E. (NASA Glenn Research Center Cleveland, OH, United States)
Spry, David J. (NASA Glenn Research Center Cleveland, OH, United States)
Neudeck, Philip G. (NASA Glenn Research Center Cleveland, OH, United States)
Date Acquired
January 17, 2018
Publication Date
January 14, 2018
Subject Category
Earth Resources And Remote Sensing
Electronics And Electrical Engineering
Report/Patent Number
GRC-E-DAA-TN45063
Meeting Information
Meeting: Radio & Wireless Week (RWW)
Location: Anaheim, CA
Country: United States
Start Date: January 14, 2018
End Date: January 17, 2018
Sponsors: Institute of Electrical and Electronics Engineers
Funding Number(s)
WBS: WBS 295670.01.04.58
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
Keywords
Diode
SiC
Inductive Power Transfer

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