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Yearlong 500 C Operational Demonstration of Up-Scaled 4H-SiC JFET Integrated CircuitsThis work describes recent progress in the design, processing, and testing of significantly up-scaled 500 C durable 4H-SiC junction field effect transistor (JFET) integrated circuit (IC) technology with two-level interconnect undergoing development at NASA Glenn Research Center. For the first time, stable electrical operation of semiconductor ICs for over one year at 500 C in air atmosphere is reported. These groundbreaking durability results were attained on two-level interconnect JFET demonstration ICs with 175 or more transistors on each chip. This corresponds to a more than 7-fold increase in 500 C-durable circuit complexity from the 24 transistor ring oscillator ICs reported at HiTEC 2016. These results advance the technology foundation for realizing long-term durable 500 C ICs with increased functional capability for combustion engine sensing and control, planetary exploration, deep-well drilling monitoring, and other harsh-environment applications.
Document ID
Acquisition Source
Glenn Research Center
Document Type
Conference Paper
Neudeck, Philip G.
(NASA Glenn Research Center Cleveland, OH, United States)
Spry, David J.
(NASA Glenn Research Center Cleveland, OH, United States)
Krasowski, Michael J.
(NASA Glenn Research Center Cleveland, OH, United States)
Prokop, Norman F.
(NASA Glenn Research Center Cleveland, OH, United States)
Beheim, Glenn M.
(NASA Glenn Research Center Cleveland, OH, United States)
Chen, Liangyu
(Ohio Aerospace Inst. Cleveland, OH, United States)
Chang, Carl W.
(Vantage Partners, LLC Cleveland, OH, United States)
Date Acquired
June 4, 2018
Publication Date
May 8, 2018
Subject Category
Electronics And Electrical Engineering
Report/Patent Number
Meeting Information
Meeting: International Conference on High Temperature Electronics (HiTEC 2018)
Location: Albuquerque, NM
Country: United States
Start Date: May 8, 2018
End Date: May 10, 2018
Sponsors: International Microelectronics Assembly and Packaging Society (iMAPS)
Funding Number(s)
WBS: WBS 109492.02.03.02
Distribution Limits
Public Use Permitted.
Silicon carbides
integrated circuits
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