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Modification of Radiator Pigments by Atomic Layer Deposition (ALD)The optical and physical properties of spacecraft radiator coatings are dictated by orbital environmental conditions. For example, coatings must adequately dissipate charge buildup when orbital conditions, such as polar, geostationary or gravity neutral, result in surface charging. Current dissipation techniques include depositing a layer of ITO (indium tin oxide) on the radiator surface in a high temperature process. Other examples include the application of variable emittance coatings such as the use of VO2 to optimize radiator size, allowing for a decrease in heater power budget. The application of these enhanced coatings must be such that the properties in question are tailored to mission-specific requirements. Modification of these coatings can be accomplished during coating application preprocessing by using a deposition technique prevalent in the semiconductor micro processing industry called Atomic Layer Deposition (ALD). The preprocessing is rendered directly on the coating dry pigment before binding. ALD is a cost effective nano-manufacturing technique that allows for the conformal coating of substrates with atomic-level thickness control in a benign temperature and pressure environment. Through the introduction of paired precursor gases, thin films can be deposited on a myriad of substrates ranging from glass, polymers, aerogels, metals, powders, and other high aspect-ratio micro- and nano-structures. By providing atomic-level control, where single layers of atoms can be deposited, the fabrication of metal transparent films, precise nano-laminates, and coatings of nano-channels and pores is achievable. We have demonstrated a method for the ALD of In2O3 and ITO films on a variety of substrates from Si(100) wafers, glass slides, and on Z93P pigments (patent pending). The results indicate excellent growth of 4-22 nm thick films demonstrating an order of magnitude decrease in resistivity on the pigments.
Document ID
20180004693
Acquisition Source
Goddard Space Flight Center
Document Type
Presentation
Authors
Dwivedi, Vivek H.
(NASA Goddard Space Flight Center Greenbelt, MD, United States)
Date Acquired
August 27, 2018
Publication Date
July 8, 2018
Subject Category
Aeronautics (General)
Report/Patent Number
GSFC-E-DAA-TN58724
Meeting Information
Meeting: International Conference on Environmental Systems
Location: Albuquerque, NM
Country: United States
Start Date: July 8, 2018
End Date: July 12, 2018
Sponsors: International Conference On Environmental Systems, Inc.
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
Keywords
ITO
Charge Dissipation
Atomic Layer Deposition
Pigments
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