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Room Temperature Radiation Testing of a 500 °C Durable 4H-SiC JFET Integrated Circuit TechnologyTotal ionizing dose (TID) and single-event effect (SEE) room-temperature radiation test results are presented for developmental prototype 4H-SiC junction field effect transistor (JFET) semiconductor integrated circuits (ICs) that have demonstrated prolonged operation in extremely high-temperature (500 °C) environments. The devices tested demonstrated over 7 Mrad(Si) TID tolerance and no destructive SEE susceptibility.
Document ID
20190031951
Document Type
Conference Paper
Authors
Lauenstein, Jean-Marie ORCID(NASA Goddard Space Flight Center Greenbelt, MD, United States)
Neudeck, Philip G. ORCID(NASA Glenn Research Center Cleveland, OH, United States)
Ryder, Kaitlyn L. (NASA Goddard Space Flight Center Greenbelt, MD, United States)
Wilcox, Edward P. (NASA Goddard Space Flight Center Greenbelt, MD, United States)
Chen, Liangyu (Ohio Aerospace Inst. Cleveland, OH, United States)
Carts, Martin A. (NASA Goddard Space Flight Center Greenbelt, MD, United States)
Wrbanek, Susan Y. (NASA Glenn Research Center Cleveland, OH, United States)
Wrbanek, John D. (NASA Glenn Research Center Cleveland, OH, United States)
Date Acquired
October 2, 2019
Publication Date
July 8, 2019
Subject Category
Electronics And Electrical Engineering
Report/Patent Number
GSFC-E-DAA-TN70540
Meeting Information
Meeting: IEEE Nuclear and Space Radiation Effects Conference (NSREC)
Location: San Antonio, TX
Country: United States
Start Date: July 8, 2019
End Date: July 12, 2019
Sponsors: IEEE Nuclear and Plasma Sciences Society (NPSS)
Funding Number(s)
CONTRACT_GRANT: NNC13BA10B
Distribution Limits
Public
Copyright
Public Use Permitted.
Technical Review
External Peer Committee

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IDRelationTitle20190027249See AlsoRoom Temperature Total-Ionizing Dose Testing of Glenn Research Center (GRC) 500 °C Durable 4H-SiC JFET IC Technology
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