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Single crystalline Ge thin film growth on c-plane sapphire substrates by molecular beam epitaxy (MBE)
External Source
chorus
Document Type
Accepted Manuscript
Authors
Emmanuel Wangila (Program of Materials Science and Engineering, University of Arkansas, Fayetteville, Arkansas 72701, USA)
Samir K. Saha (Program of Materials Science and Engineering, University of Arkansas, Fayetteville, Arkansas 72701, USA)
Rahul Kumar (Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, Arkansas 72701, USA)
Andrian Kuchuk (Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, Arkansas 72701, USA)
Calbi Gunder (Program of Materials Science and Engineering, University of Arkansas, Fayetteville, Arkansas 72701, USA)
Sylvester Amoah (Department of Electrical Engineering, University of Arkansas, Fayetteville, Arkansas 72701, USA)
Krista R. Khiangte (Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, Arkansas 72701, USA)
Zhong Chen (Department of Electrical Engineering, University of Arkansas, Fayetteville, Arkansas 72701, USA)
Shui-Qing Yu (Department of Electrical Engineering, University of Arkansas, Fayetteville, Arkansas 72701, USA)
Gregory J. Salamo (Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, Arkansas 72701, USA)
Date Acquired
September 28, 2024
Publication Date
January 1, 2022
Publication Information
Publication: CrystEngComm
Publisher: Royal Society of Chemistry (RSC)
Volume: 24
Issue: 24
e-ISSN: 1466-8033
DOI: 10.1039/d1ce01715b
Funding Number(s)
funding: 80NSSC19M0145
funding: 1809054
Distribution Limits
Public

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