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Effects of Impurities on Radiation Damage of Silicon Solar CellsImpurity effect on radiation damage of silicon solar cells - tendency of boron atoms in silicon to create recombination centers
Document ID
19640019244
Acquisition Source
Legacy CDMS
Document Type
Other
Authors
Mandelkorn, J. (NASA Lewis Research Center Cleveland, OH, United States)
Date Acquired
September 2, 2013
Publication Date
June 2, 1964
Subject Category
Chemistry
Report/Patent Number
NASA-CR-58680
PIC-SOL-209/5
Accession Number
64N29158
Funding Number(s)
CONTRACT_GRANT: NASR-191
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
Keywords
DAMAGE
RECOMBINATION
SILICON
BORON
RADIATION EFFECT
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