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Photovoltaic properties of gaas thin filmsPhotovoltaic properties of vapor deposited polycrystalline gallium arsenide thin films
Document ID
19640022814
Acquisition Source
Legacy CDMS
Document Type
Other
Authors
Pasierb, E. F. (Radio Corp. of America Princeton, NJ, United States)
Perkin, D. M. (Radio Corp. of America Princeton, NJ, United States)
Date Acquired
August 2, 2013
Publication Date
August 1, 1964
Subject Category
Chemistry
Accession Number
64N32728
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
Keywords
GALLIUM ARSENIDE
VAPOR DEPOSITION
THIN FILM

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