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Study of energy levels in high energy proton damaged silicon.Energy level defects in n- and p-type silicon due to high energy protons, and comparison with electron damage
Document ID
19640028620
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
Authors
Carter, J. R., Jr.
Date Acquired
August 2, 2013
Publication Date
January 1, 1964
Subject Category
Physics, Plasma
Accession Number
64A14513
Funding Number(s)
CONTRACT_GRANT: NAS5-1851
Distribution Limits
Public
Copyright
Other
Keywords
PROTON DAMAGE
SILICON
ENERGY LEVEL

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