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Transit-time considerations in p-i-n diodes.Frequency response of p-i-n photodiode, taking account of mobility and nonuniform generation of carriers in i region
Document ID
19640029936
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
Authors
Emmons, R. B.
Lucovsky, G.
Schwarz, R. F.
Date Acquired
August 2, 2013
Publication Date
March 1, 1964
Subject Category
Physics, Plasma
Accession Number
64A15829
Funding Number(s)
CONTRACT_GRANT: NAS8-5030
Distribution Limits
Public
Copyright
Other
Keywords
P-I-N DIODE
PHOTODIODE

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