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Absorption edge modulator utilizing a p-n junction.Optical absorption edge shift in reverse-biased p-n junction gallium arsenide semiconductor for light modulation
Document ID
19640034055
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
Authors
Racette, G.
Date Acquired
August 2, 2013
Publication Date
June 1, 1964
Subject Category
Electronic Equipment
Accession Number
64A19948
Funding Number(s)
CONTRACT_GRANT: NASW-721/10-1227/
CONTRACT_GRANT: NASW-721/10-804/
Distribution Limits
Public
Copyright
Other
Keywords
OPTICAL ABSORPTION
LIGHT MODULATOR
P-N JUNCTION
GALLIUM ARSENIDE

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