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Test on 2n2369, npn silicon epitaxial transistors manufactured by fairchild semiconductorElectric resistivity of carbon resistor material for calculating static response characteristics of carbon bolometer element
Document ID
19650003671
Acquisition Source
Legacy CDMS
Document Type
Contractor Report (CR)
Authors
Haskins, F. E. (Librascope, Inc. Glendale, CA, United States)
Trempe, L. E. (Librascope, Inc. Glendale, CA, United States)
Date Acquired
August 2, 2013
Publication Date
April 24, 1964
Subject Category
Electronic Equipment
Report/Patent Number
TR-7-0057
NASA-CR-59908
Report Number: TR-7-0057
Report Number: NASA-CR-59908
Accession Number
65N13272
Funding Number(s)
CONTRACT_GRANT: JPL-950230
CONTRACT_GRANT: NAS7-100
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
Keywords
N-P-N JUNCTION
TRANSISTOR
ENVIRONMENTAL TESTING
SILICON JUNCTION
ELECTRIC PROPERTY

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