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Single-crystal semiconductor films grown on foreign substratesIntermediate alloy formed between foreign substrates and semiconductor material enable the growth of single crystal semiconductor films on the alloy layer. The melted film must not ball up on the surface of the substrate and neither chemically react nor alloy with the intermediate alloy formed on the substrate.
Document ID
19660000224
Acquisition Source
Legacy CDMS
Document Type
Other - NASA Tech Brief
Authors
Vohl, P.
Date Acquired
August 3, 2013
Publication Date
May 1, 1966
Subject Category
Electronic Components And Circuits
Report/Patent Number
Report Number: WOO-076
WOO-076
Accession Number
66B10225
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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