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Design, development, fabrication, and delivery of improved MOS transistors Second quarterly progress report, 22 Aug. - 21 Nov. 1965Causes of instability, high threshold voltage, and gamma radiation sensitivity of metal-oxide silicon transistors
Document ID
19660006693
Acquisition Source
Legacy CDMS
Document Type
Contractor Report (CR)
Authors
Schlegel, E. S. (Philco Corp. Lansdale, PA, United States)
Date Acquired
August 3, 2013
Publication Date
January 1, 1965
Subject Category
Physics, Solid-State
Report/Patent Number
NASA-CR-69652
R-505
Report Number: NASA-CR-69652
Report Number: R-505
Accession Number
66N15982
Funding Number(s)
CONTRACT_GRANT: NAS8-11926
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
Keywords
METAL OXIDE
SILICON TRANSISTOR
GAMMA RADIATION

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