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Thermal annealing of radiation damaged siliconThermal annealing kinetics of radiation damaged silicon
Document ID
19660009089
Acquisition Source
Legacy CDMS
Document Type
Technical Memorandum (TM)
Authors
Fang, P. H. (NASA Goddard Space Flight Center Greenbelt, MD, United States)
Date Acquired
September 2, 2013
Publication Date
January 1, 1965
Subject Category
Auxiliary Systems
Report/Patent Number
NASA-TM-X-56306
Report Number: NASA-TM-X-56306
Accession Number
66N18378
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
Keywords
SILICON
ANNEALING
RADIATION EFFECT

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