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Thin film process forms effective electrical contacts on semiconductor crystalsProcess makes microscopic, low-resistance electrical contacts on hexagonal n-type silicon carbide crystals used for microelectronic devices. A vacuum deposition of aluminum is etched to expose the bare silicon carbide where the electrical contacts are made. Sputtering alternating layers of tantalum and gold forms the alloy film.
Document ID
19670000142
Acquisition Source
Legacy CDMS
Document Type
Other - NASA Tech Brief
Authors
Formigoni, N. P.
Roberts, J. S.
Date Acquired
August 3, 2013
Publication Date
May 1, 1967
Subject Category
Electronic Components And Circuits
Report/Patent Number
MFS-2343
Report Number: MFS-2343
Accession Number
67B10142
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
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