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Method of improving contact bonds in silicon integrated circuitsFabrication method produces stable and reliable metallic systems for interconnections, contact pads, and bonded leads in silicon planar integrated circuits. The method is based on substrate isolation of the interconnection metal from the contact pad and bonded wire.
Document ID
19670000335
Acquisition Source
Legacy CDMS
Document Type
Other - NASA Tech Brief
Authors
Lytle, W. J.
Schuster, M. A.
Date Acquired
August 3, 2013
Publication Date
September 1, 1967
Subject Category
Electronic Components And Circuits
Report/Patent Number
MFS-1753
Report Number: MFS-1753
Accession Number
67B10335
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
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