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Isolation of components on a silicon wafer using SiO2Isolation of components on silicon wafer by groove etching and silicon dioxide deposition
Document ID
19670000915
Acquisition Source
Legacy CDMS
Document Type
Contractor Report (CR)
Authors
Skouson, G. W.
(Westinghouse Electric Corp. Baltimore, MD, United States)
Date Acquired
August 3, 2013
Publication Date
November 1, 1966
Subject Category
Materials, Nonmetallic
Report/Patent Number
NASA-CR-580
Report Number: NASA-CR-580
Accession Number
67N10238
Funding Number(s)
CONTRACT_GRANT: NAS5-3758
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
Keywords
ISOLATION
GROOVE
ETCHING
SILICON COMPOUND
DEPOSITION
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