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X-ray spectra produced when thick silicon targets are bombarded with 1.05 and 1.25 million volts electronsMeasurements of X-rays produced when thick silicon targets are bombarded with 1.05 and 1.25 MeV electrons and comparison to Bethe-Heitler theory
Document ID
19670004024
Acquisition Source
Legacy CDMS
Document Type
Other - NASA Technical Note (TN)
Authors
Adams, R. (NASA Langley Research Center Hampton, VA, United States)
Gross, C. (NASA Langley Research Center Hampton, VA, United States)
Singh, J. J. (NASA Langley Research Center Hampton, VA, United States)
Date Acquired
September 2, 2013
Publication Date
December 1, 1966
Subject Category
Physics, Atomic, Molecular, And Nuclear
Report/Patent Number
NASA-TN-D-2773
Report Number: NASA-TN-D-2773
Accession Number
67N13353
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
Keywords
SILICON
BETHE-HEITLER FORMULA
X-RAY
ELECTRON BOMBARDMENT

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