Effect of radiation of the stability of silicon nitride and metal nitride semiconductor FET device  Quarterly report, 1 Jul. - 1 Oct. 1966

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Effect of radiation of the stability of silicon nitride and metal nitride semiconductor FET device Quarterly report, 1 Jul. - 1 Oct. 1966

Growing of silicon nitride films, and radiation induced etch rate enhancement in silicon nitride films

Document ID

19670009085

Acquisition Source

Legacy CDMS

Document Type

Contractor Report (CR)

Authors

Date Acquired

August 3, 2013

Publication Date

October 1, 1966

Subject Category

Report/Patent Number

Accession Number

67N18414

Funding Number(s)

Distribution Limits

Public

Work of the US Gov. Public Use Permitted.

Keywords

Name

Type

STI

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NTRS