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A thick-film, insulated gate field effect transistorFeasibility of fabricating thick film, insulated gate field effect transistor using integrated screened circuit technology
Document ID
19670022248
Acquisition Source
Legacy CDMS
Document Type
Other
Authors
Stermer, R. L., Jr. (NASA Langley Research Center Hampton, VA, United States)
Date Acquired
August 3, 2013
Publication Date
June 1, 1967
Subject Category
Electronic Equipment
Accession Number
67N31577
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
Keywords
INTEGRATED CIRCUIT
INSULATED STRUCTURE
MANUFACTURING
FIELD EFFECT TRANSISTOR /FET/
THICK FILM
SCREENING TECHNIQUE
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