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Complementary MOS-FET NAND gate modeling for computer-aided transient analysisNonlinear model of field effect transistor for computer aided transient analysis of complementary metal oxide semiconductor-field effect transistor NAND gate
Document ID
19670022258
Acquisition Source
Legacy CDMS
Document Type
Other
Authors
Dumanian, J. A. (NASA Electronics Research Center Cambridge, MA, United States)
Kaliski, M. E. (NASA Electronics Research Center Cambridge, MA, United States)
Date Acquired
August 3, 2013
Publication Date
June 1, 1967
Subject Category
Electronic Equipment
Accession Number
67N31587
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
Keywords
LOGICAL DESIGN
FIELD EFFECT TRANSISTOR /FET/
TRANSISTOR LOGIC
METAL OXIDE SEMICONDUCTOR /MOS/
MATHEMATICAL MODEL
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