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Phenomenological study of radiation damage and recovery of metal-oxide field effect transistorsPhenomenological study of radiation damage and recovery of metal oxide semiconductor field effect transistors
Document ID
19670022272
Acquisition Source
Legacy CDMS
Document Type
Other
Authors
Desai, U. D. (NASA Goddard Space Flight Center Greenbelt, MD, United States)
Van Allen, R. L. (NASA Goddard Space Flight Center Greenbelt, MD, United States)
Wolfgang, J. L., Jr. (NASA Goddard Space Flight Center Greenbelt, MD, United States)
Date Acquired
August 3, 2013
Publication Date
June 1, 1967
Subject Category
Electronic Equipment
Accession Number
67N31601
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
Keywords
METAL OXIDE SEMICONDUCTOR /MOS/
RADIATION EFFECT
FIELD EFFECT TRANSISTOR /FET/
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