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Defect-impurity relationships in electron- damaged silicon.Defect impurity relation in electron damaged p-type silicon and electron irradiation effect on float zone n-type silicon
Document ID
19670036961
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
Authors
Carter, J. R., Jr.
Date Acquired
August 3, 2013
Publication Date
December 1, 1966
Publication Information
Publication: /INST. OF ELECTRICAL AND ELECTRONICS ENGINEERS
Subject Category
Physics, Solid-State
Accession Number
67A15690
Funding Number(s)
CONTRACT_GRANT: NAS5-3805
Distribution Limits
Public
Copyright
Other
Keywords
N-TYPE SEMICONDUCTOR
CRYSTAL STRUCTURE DEFECT
RADIATION EFFECT
ELECTRON BOMBARDMENT
P-TYPE SEMICONDUCTOR

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