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Electron mobility measurements in SiC polytypes.Electron mobility measurements in n-type SiC polytypes noting temperature dependence
Document ID
19670042565
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
External Source(s)
doi:10.1063/1.1709008
Authors
Barrett, D. L.
Campbell, R. B.
Date Acquired
August 3, 2013
Publication Date
January 1, 1967
Publication Information
Publication: JOURNAL OF APPLIED PHYSICS
Subject Category
Physics, Solid-State
Accession Number
67A21294
Funding Number(s)
CONTRACT_GRANT: AF 33/615/-1440
CONTRACT_GRANT: NAS8-11861
CONTRACT_GRANT: AF 33/615/-2363
Distribution Limits
Public
Copyright
Other
Keywords
N-TYPE SEMICONDUCTOR
SILICON CARBIDE
ELECTRON MOBILITY
TEMPERATURE EFFECT

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