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Kinetics of Complex Defect Annealing in SiliconRelation in silicon between annealing rates, residual damage and defect concentrations, noting link to activation energy increase
Document ID
19670043691
Acquisition Source
Goddard Space Flight Center
Document Type
Reprint (Version printed in journal)
Authors
Fang, P. H. (NASA Goddard Space Flight Center Greenbelt, MD, United States)
Date Acquired
August 3, 2013
Publication Date
February 27, 1967
Publication Information
Publication: Physics Letters
Volume: 24a
Subject Category
Solid-State Physics
Accession Number
67A22420
Distribution Limits
Public
Copyright
Other
Keywords
CRYSTAL STRUCTURE DEFECT
ACTIVATION ENERGY
ANNEALING
SILICON

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