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High-power pulsed GaAs laser diodes operating at room temperature.GaAs pulsed injection laser diode noting characteristics for room temperature operation
Document ID
19670060524
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
Authors
Nelson, H.
Date Acquired
August 3, 2013
Publication Date
August 1, 1967
Publication Information
Publication: IEEE, PROCEEDINGS
Subject Category
Masers
Accession Number
67A39253
Funding Number(s)
CONTRACT_GRANT: DA-28-043-AMC-02471/E/
CONTRACT_GRANT: NAS9-6195
Distribution Limits
Public
Copyright
Other
Keywords
EPITAXIAL DEPOSITION
ROOM TEMPERATURE
SEMICONDUCTOR LASER
JUNCTION DIODE
PULSED LASER
GALLIUM ARSENIDE

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