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Integrated metal transistor leadsTechnique that makes the metal leads integral to the transistor wafer and reduces capacitance in the device, thereby increasing its efficiency is outlined.
Document ID
19680000474
Acquisition Source
Legacy CDMS
Document Type
Other - NASA Tech Brief
Authors
Carley, D. R.
Casterline, E. T.
Date Acquired
August 4, 2013
Publication Date
July 1, 1968
Subject Category
Electronic Components And Circuits
Report/Patent Number
GSC-90536
Report Number: GSC-90536
Accession Number
68B10518
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
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