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High-temperature-materials studyChemical vapor deposition of aluminum phosphides onto single crystals of silicon and gallium arsenide for producing high temperature operating solid state electronic devices
Document ID
19680011557
Acquisition Source
Legacy CDMS
Document Type
Contractor Report (CR)
Authors
Baxter, R. D. (Battelle Memorial Inst. Columbus, OH, United States)
Reid, F. J. (Battelle Memorial Inst. Columbus, OH, United States)
Stambaugh, E. P. (Battelle Memorial Inst. Columbus, OH, United States)
Date Acquired
August 4, 2013
Publication Date
January 1, 1968
Subject Category
Physics, Solid-State
Report/Patent Number
NASA-CR-86043
Report Number: NASA-CR-86043
Accession Number
68N21026
Funding Number(s)
CONTRACT_GRANT: NAS12-107
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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