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Proton-produced defects in n-type siliconDefect energy levels and concentrations for proton irradiated, n-type silicon single crystals
Document ID
19680027579
Acquisition Source
Legacy CDMS
Document Type
Other - NASA Technical Note (TN)
Authors
Breckenridge, R. A. (NASA Langley Research Center Hampton, VA, United States)
Date Acquired
September 2, 2013
Publication Date
October 1, 1968
Subject Category
Physics, Solid-State
Report/Patent Number
NASA-TN-D-4830
Report Number: NASA-TN-D-4830
Accession Number
68N37051
Funding Number(s)
CONTRACT_GRANT: 124-09-12-09-23
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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