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Silicon oxide films grown in a microwave discharge.Silicon oxide film growth behavior in microwave discharge noting limiting oxide thickness obtainable at infinite time free of mobile ions
Document ID
19680029714
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
Authors
Kraitchman, J.
Date Acquired
August 4, 2013
Publication Date
October 1, 1967
Publication Information
Publisher: JOURNAL OF APPLIED PHYSICS, VOL. 38, P. 4323-4330.
Subject Category
Physics, Solid-State
Accession Number
68A10686
Distribution Limits
Public
Copyright
Other

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