Infrared pinpoints second breakdown before failure.Transistor second breakdown location, size and temperature detected and analyzed before failure by high resolution IR microscope
Document ID
19680030698
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Laracuente, F. A.
Nowakowski, M. F.
Date Acquired
August 4, 2013
Publication Date
January 1, 1967
Publication Information
Publisher: INST. OF ELECTRICAL AND ELECTRONICS ENGINEERS, INC., P. 87-94.
Subject Category
Electronic Equipment
Meeting Information
Meeting: INTERNATIONAL CONVENTION
Location: NEW YORK, NY
Start Date: March 20, 1967
End Date: March 23, 1967
Sponsors: INST. OF ELECTRICAL AND ELECTRONICS ENGINEERS